Application:
RF plasma sources are intended to create and sustain a dense, low energetic plasma or mono-energetic ion flow with high homogeneity in vacuum process systems.

Main application:
- anisotropic etching of sub micron structures in resist in microelectronics production;
- plasma chemical deposition of non-defect functional dielectric films in semiconductor and hybrid microelectronics production;
- synthesis of polymeric coatings and new materials;
- mass-spectrometer analysis with inductive-coupled plasma;
- dielectric surface modification for applying new properties (like hydrophilicity).

Description:
Inductively coupled plasma (ICP) RF discharge is excited by a current flowing through a water-cooled inductor (antenna). RF power applied to the inductor creates a vortex electrical field in the vacuum chamber, which ensures the generation of plasma. In a low-pressure inductively coupled high-frequency discharge, the power of the high-frequency generator is distributed between the active resistance of the external circuit and the plasma, and the power enters the plasma through two channels: inductive, which exists due to the current flowing through the inductor (antenna), and capacitive, due to the presence of capacitive coupling between the antenna and plasma.
RF source is a plane (planar) or cylindrical system of electrodeless RF inductive discharge. A grid can be applied for the extraction (pulling out) of the ions of increasing the ion energy.

Technical data: