Circular planar magnetrons

Circular planar magnetrons

Used in vacuum lab and batch equipment with substrate sizes up to 250 mm

Magnetron sputtering is a technology for the deposition of thin films in a vacuum chamber and in a working gas environment using cathode sputtering of the target material in a crossed electric and magnetic field set up.
Electrically conductive materials, such as conductors and semiconductors, can be  used as target materials in a medium-frequency DC and AC magnetron set-up. The use of magnetic materials is limited by the thickness of the target and requires the use of a special magnetic system. For the sputtering of dielectric materials, DC -pulsed powered or  AC  powered or RF powered  magnetron sputtering processes need to be used. The RF version requires an rf generator and a rf  matching load tuned to the applied discharge system.

Round magnetrons are used in vacuum lab and batch equipment with substrate sizes up to 250 mm.

Main applications:
- production of optical, semiconductor devices, thin-film hybrid integrated circuits, piezoelectric products, acoustoelectronics;
- deposition of functional coatings: optical, conductive, protective, dielectric, metalisation of the surface of plastic and glass products, etc;
- source of electrons for ion-beam source.

Technical data:

Parameters Basic Options
Magnetron type Planar round
Working pressure 0,2 ÷ 2 Pa
Target material non-magnetic, electrically conductive materials and semiconductors (Si, Ge, etc.) magnetic materials, dielectrics
Target size Ø50.8, 76.2, 101.6, 127, 166, 203.2, 254, 304.8 by request
Anode No Yes
Magnetic system Permanent magnets NdFeB+2xNi
Gas distributor No by request

Target cooling

Indirect Direct
Power supply DC, DC-pulse, MF-AC RF, HiPIMS
Specific maximum power DC/DC-pulse/MF-AC 15 W/cm2 38 W/cm2
Specific maximum power RF 5,2 W/cm2 12,9 W/cm2
Target utilization 15...40% >45%
Gas flow (depends on pumping) 15…250 cm3/min
Mean time between maintenance (mtbm) 50 h
Cooling water
Cooling water temperature 18...25 °C
Water pressure 2..4 bar
Water flow >0,7 l/min/kW
Working gas Ar, O2 and other
Working gas purity 99,99 %