Magnetron sputtering is a technology for the deposition of thin films in a vacuum chamber and in a working gas environment using cathode sputtering of the target material in a crossed electric and magnetic field set up.
Electrically conductive materials, such as conductors and semiconductors, can be  used as target materials in a medium-frequency DC and AC magnetron set-up. The use of magnetic materials is limited by the thickness of the target and requires the use of a special magnetic system. For the sputtering of dielectric materials, DC -pulsed powered or  AC  powered or RF powered  magnetron sputtering processes need to be used. The RF version requires an rf generator and a rf  matching load tuned to the applied discharge system.
Application:
Round magnetrons are used in vacuum lab and batch equipment with substrate sizes up to 250 mm.
Main applications:
- Production of optical, semiconductor devices, thin-film hybrid integrated circuits, piezoelectric products, acoustoelectronics;
- Deposition of functional coatings: optical, conductive, protective, dielectric, metalisation of the surface of plastic and glass products, etc;
- Source of electrons for ion-beam source.
Technical data:
| Parameters | Basic | Options | 
| Magnetron type | Planar round | |
| Working pressure | 0,2 ÷ 2 Pa | |
| Target material | non-magnetic, electrically conductive materials and semiconductors (Si, Ge, etc.) | magnetic materials, dielectrics | 
| Target size | Ø50.8, 76.2, 101.6, 127, 166, 203.2, 254, 304.8 | by request | 
| Anode | No | Yes | 
| Magnetic system | Permanent magnets NdFeB+2xNi | |
| Gas distributor | No | by request | 
| Target cooling | Indirect | Direct | 
| Power supply | DC, DC-pulse, MF-AC | RF, HiPIMS | 
| Specific maximum power DC/DC-pulse/MF-AC | 15 W/cm2 | 38 W/cm2 | 
| Specific maximum power RF | 5,2 W/cm2 | 12,9 W/cm2 | 
| Target utilization | 15...40% | >45% | 
| Gas flow (depends on pumping) | 15…250 cm3/min | |
| Mean time between maintenance (mtbm) | 50 h | |
| Cooling | water | |
| Cooling water temperature | 18...25 °C | |
| Water pressure | 2..4 bar | |
| Water flow | >0,7 l/min/kW | |
| Working gas | Ar, O2 and other | |
| Working gas purity | 99,99 % | |
 
                                                        
                                                        
                                                        
                                                        
                                                     
                                                        
                                                        
                                                        
                                                        
                                                     
                                                        
                                                        
                                                        
                                                        
                                                     
                                                        
                                                        
                                                        
                                                        
                                                     
                                                        
                                                        
                                                        
                                                        
                                                     
                                                        
                                                        
                                                        
                                                        
                                                     
                                                        
                                                        
                                                        
                                                        
                                                    