Magnetron sputtering is a technology for thin films depositing in a vacuum chamber and in a working gas using cathode sputtering of the target material in crossed electric and magnetic fields.
Electrically conductive materials, such as conductors and semiconductors, are used as targets in medium-frequency DC and AC magnetrons. The use of magnetic materials is limited by the thickness of the target and requires the use of a special magnetic system. For the sputtering of dielectric materials, the HF version of the magnetron is used, which also requires an HF generator and a matching unit tuned to the applied discharge system.
Applacation:
Rectangular magnetrons are used in vacuum installations of periodic and continuous operation with substrate sizes up to 3 meters or more.
Main tasks:
- Production of optical, semiconductor devices, thin-film hybrid integrated circuits, piezoelectric products, acoustoelectronics;
- Deposition of functional coatings: optical, conductive, protective, dielectric, metallization of the surface of plastic and glass products, etc;
- Source of electrons for ion-beam source.
Technical data:
| Parameters | Basic | Options | 
| Magnetron type | Planar rectangular | |
| Working pressure | 0,2 ÷ 2 Pa | |
| Target material | non-magnetic, electrically conductive materials and semiconductors (Si, Ge, etc.) | magnetic materials, dielectrics | 
| Target width | 65, 88, 101.6, 127, 152.4, 203.2, 254, 304.8 | by request | 
| Target length | by request | |
| Magnetic system | Permanent magnets NdFeB+2xNi | |
| Gas distributor | No | Yes | 
| Target cooling | Indirect | Direct | 
| Power supply | DC, DC-pulse, MF-AC | RF, HiPIMS | 
| Specific maximum power DC/DC-pulse/MF-AC | 15,5 W/cm2 | 38,8 W/cm2 | 
| Specific maximum power RF | 5,2 W/cm2 | 12,9 W/cm2 | 
| Target utilization | 15...40% | >45% | 
| Gas flow (depends on pumping) | 15…250 cm3/min | |
| Mean time between maintenance (mtbm) | 50 h | |
| Cooling | water | |
| Cooling water temperature | 18...25 °C | |
| Water pressure | 2..4 bar | |
| Water flow | >0,7 l/min/kW | |
| Working gas | Ar, O2 and other | |
| Working gas purity | 99,99 % | |
 
                                                        
                                                        
                                                        
                                                        
                                                     
                                                        
                                                        
                                                        
                                                        
                                                     
                                                        
                                                        
                                                        
                                                        
                                                     
                                                        
                                                        
                                                        
                                                        
                                                     
                                                        
                                                        
                                                        
                                                        
                                                    