Ion-beam treatment of the surface defined as a certain effect resulting from applying ion beams (of a certain characteristic with defined energy and ion density) to the substrate.
End-hall ion-beam sources form high density low-energy ion flows in vacuum. The source creates cone shape divergent flow of working gas ions.
The Ion Beam Assisting System includes the power supply, EHS-50, gas control and cooling operation, shutter and all vacuum feedthrough for installation into vacuum chamber.
Application:
EHS-50 applied in vacuum technological systems for assisting the process of film deposition with low-energy ions of inert or reactive gases. EHS-50 can be applied in technological processes of ion-beam cleaning, reactive ion-beam etching, coatings synthesis from gas phase, etc.
Main applications:
- Low-energy (gentle) ion-beam cleaning of substrates and assisting while depositing in the production of optics, microelectronics;
- Synthesis of coatings from gas phase, reactive etching, plasma-chemical reactions (oxidation, nitration) for R&D and production processes.
Technical data:
| Parameters | Basic | Options |
| Source type | end-hall | |
| Working pressure | 0,009 ÷ 0,15Pa | |
| Aperture diameter | Ø50 | by request |
| Magnetic system | Permanent magnets NdFeB+2xNi | |
| Gas distributor | Yes | |
| Anode voltage | 60 ÷ 250 V | by request |
| Anode current | up to 8 A | by request |
| The average ion energy | 24 ÷ 150 eV | by request |
| Ion current | up to 1,6 A | by request |
| Gas flow | 5…40 cm3/min | |
| Mean time between maintenance (mtbm) | 120 h | |
| Cooling | water | |
| Cooling water temperature | 18...25 °C | |
| Water pressure | 2..4 bar | |
| Water flow | >0,7 l/min/kW | |
| Working gas | Ar, O2 and other | |
| Working gas purity | 99,99 % | |
| Overall dimensions, mm | Ø120x174 | |
| Weight, kg | 5,5 | |
