EHS-50 (End hall source)

Ion-beam treatment of the surface defined as a certain effect resulting from applying ion beams (of a certain characteristic with defined energy and ion density) to the substrate.
End-hall ion-beam sources form high density low-energy ion flows in vacuum. The source creates cone shape divergent flow of working gas ions.
The Ion Beam Assisting System includes the power supply, EHS-50, gas control and cooling operation, shutter and all vacuum feedthrough for installation into vacuum chamber.

Application:
EHS-50 applied in vacuum technological systems for assisting the process of film deposition with low-energy ions of inert or reactive gases. EHS-50 can be applied in technological processes of ion-beam cleaning, reactive ion-beam etching, coatings synthesis from gas phase, etc.

Main applications:
- low-energy (gentle) ion-beam cleaning of substrates and assisting while depositing  in the production of optics, microelectronics;
- synthesis of coatings from gas phase, reactive etching, plasma-chemical reactions (oxidation, nitration) for R&D and production processes.

Technical data:

Model: EHS-50 Assisting source
Model: IBAS= EHS-50 + IPS-A3K + shutter + vacuum inputs Ion Beam Assisting System
Model: EHS-50-F250-UHV UHV assisting source on flange CF250